| PART |
Description |
Maker |
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| 45912-0030 0459120030 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Signal, Power, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| ATMEGA103-14 |
AVR ?High-performance and Low-power RISC Architecture
Power Consumption when Using Slowly Rising Power Supply
|
ATMEL Corporation
|
| 2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1499 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0938 2SB0938A 2SB938 2SB938A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1252A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0936 2SB0936A 2SB936 2SB936A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
